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פותח על ידי קלירמאש פתרונות בע"מ -
Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures
Year:
1983
Source of publication :
Thin Solid Films
Authors :
רוזנטל, יונל
;
.
Volume :
107
Co-Authors:
Avni, R., Division of Chemistry, Nuclear Research Centre-Negev, P.O. Box 9001, Beer-Sheva, Israel
Carmi, U., Division of Chemistry, Nuclear Research Centre-Negev, P.O. Box 9001, Beer-Sheva, Israel
Rosenthal, I., Division of Chemistry, Nuclear Research Centre-Negev, P.O. Box 9001, Beer-Sheva, Israel
Manory, R., Materials Engineering Department, Ben Gurion University of the Negev, Beer-Sheva, Israel
Grill, A., Materials Engineering Department, Ben Gurion University of the Negev, Beer-Sheva, Israel
Facilitators :
From page:
235
To page:
244
(
Total pages:
10
)
Abstract:
The dissociation mechanism of SiCl4 to silicon by plasmas with argon or in mixtures of argon and H2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas. From a comparison of the two plasmas (SiCl4Ar with SiCl4ArH2), it was found that the dissociation of SiCl4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. © 1983.
Note:
Related Files :
ARGON
chlorine
CHLOROSILANE
COATING TECHNIQUES
DISSOCIATION
Hydrogen
PLASMAS
עוד תגיות
תוכן קשור
More details
DOI :
10.1016/0040-6090(83)90402-9
Article number:
Affiliations:
Database:
סקופוס
Publication Type:
מאמר
;
.
Language:
אנגלית
Editors' remarks:
ID:
19187
Last updated date:
02/03/2022 17:27
Creation date:
16/04/2018 23:27
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Scientific Publication
Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures
107
Avni, R., Division of Chemistry, Nuclear Research Centre-Negev, P.O. Box 9001, Beer-Sheva, Israel
Carmi, U., Division of Chemistry, Nuclear Research Centre-Negev, P.O. Box 9001, Beer-Sheva, Israel
Rosenthal, I., Division of Chemistry, Nuclear Research Centre-Negev, P.O. Box 9001, Beer-Sheva, Israel
Manory, R., Materials Engineering Department, Ben Gurion University of the Negev, Beer-Sheva, Israel
Grill, A., Materials Engineering Department, Ben Gurion University of the Negev, Beer-Sheva, Israel
Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures
The dissociation mechanism of SiCl4 to silicon by plasmas with argon or in mixtures of argon and H2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas. From a comparison of the two plasmas (SiCl4Ar with SiCl4ArH2), it was found that the dissociation of SiCl4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. © 1983.
Scientific Publication
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