נגישות
menu      
חיפוש מתקדם
תחביר
חפש...
הספר "אוצר וולקני"
אודות
תנאי שימוש
ניהול
קהילה:
אסיף מאגר המחקר החקלאי
פותח על ידי קלירמאש פתרונות בע"מ -
RADICAL AND ION-MOLECULE REACTIONS IN A MICROWAVE PLASMA AT LOW TEMPERATURES.
Year:
1984
Authors :
רוזנטל, יונל
;
.
Volume :
1
Co-Authors:
Avni, R., Nuclear Research Cent-Negev, Beer Sheva, Isr, Nuclear Research Cent-Negev, Beer Sheva, Isr
Carmi, U., Nuclear Research Cent-Negev, Beer Sheva, Isr, Nuclear Research Cent-Negev, Beer Sheva, Isr
Rosenthal, I., Nuclear Research Cent-Negev, Beer Sheva, Isr, Nuclear Research Cent-Negev, Beer Sheva, Isr
Inspektor, A., Nuclear Research Cent-Negev, Beer Sheva, Isr, Nuclear Research Cent-Negev, Beer Sheva, Isr
Facilitators :
From page:
299
To page:
310
(
Total pages:
12
)
Abstract:
Hydrocarbons such as CH//4 or C//3H//6, and chlorosilanes such as SiCl//4 or SiHCl//3 in concentrations of 3-10 v/o introduced into a microwave (2. 45 GHz) plasma of Ar or mixtures of Ar plus H//2, at low pressures (1-10 Torr) results with the formation of solid carbon (pyro-carbon) or silicon, respectively. In the plasma state, both hydrocarbons and chlorosilanes, polymerize to CxHy and Si//xHy forms with x greater than 1 and x greater than y. It was found that the polymerization process, in the Ar (without H//2) microwave plasma was mainly propagated by an ion-molecule mechanism, while additions of H//2 (6-20 v/o) to the Ar plasma propagates the polymerization mainly by a radical mechanism. The two mechanisms were determined by sampling the microwave plasmas with a quadrupole mass spectrometer (QMS), by indirect measurement of the plasmas free radicals concentration by an electron paramagnetic resonance (EPR) spectrometer and by measuring the deposition rate of pyrocarbon and silicon substrates floated, grounded or biased to minus 100 volts.
Note:
Related Files :
ION-MOLECULE REACTIONS
LOW PRESSURE REACTIONS
PLASMAS
RADICALS
עוד תגיות
תוכן קשור
More details
DOI :
Article number:
Affiliations:
Database:
סקופוס
Publication Type:
ספר
;
.
Language:
אנגלית
Editors' remarks:
ID:
28080
Last updated date:
02/03/2022 17:27
Creation date:
17/04/2018 00:36
You may also be interested in
Scientific Publication
RADICAL AND ION-MOLECULE REACTIONS IN A MICROWAVE PLASMA AT LOW TEMPERATURES.
1
Avni, R., Nuclear Research Cent-Negev, Beer Sheva, Isr, Nuclear Research Cent-Negev, Beer Sheva, Isr
Carmi, U., Nuclear Research Cent-Negev, Beer Sheva, Isr, Nuclear Research Cent-Negev, Beer Sheva, Isr
Rosenthal, I., Nuclear Research Cent-Negev, Beer Sheva, Isr, Nuclear Research Cent-Negev, Beer Sheva, Isr
Inspektor, A., Nuclear Research Cent-Negev, Beer Sheva, Isr, Nuclear Research Cent-Negev, Beer Sheva, Isr
RADICAL AND ION-MOLECULE REACTIONS IN A MICROWAVE PLASMA AT LOW TEMPERATURES.
Hydrocarbons such as CH//4 or C//3H//6, and chlorosilanes such as SiCl//4 or SiHCl//3 in concentrations of 3-10 v/o introduced into a microwave (2. 45 GHz) plasma of Ar or mixtures of Ar plus H//2, at low pressures (1-10 Torr) results with the formation of solid carbon (pyro-carbon) or silicon, respectively. In the plasma state, both hydrocarbons and chlorosilanes, polymerize to CxHy and Si//xHy forms with x greater than 1 and x greater than y. It was found that the polymerization process, in the Ar (without H//2) microwave plasma was mainly propagated by an ion-molecule mechanism, while additions of H//2 (6-20 v/o) to the Ar plasma propagates the polymerization mainly by a radical mechanism. The two mechanisms were determined by sampling the microwave plasmas with a quadrupole mass spectrometer (QMS), by indirect measurement of the plasmas free radicals concentration by an electron paramagnetic resonance (EPR) spectrometer and by measuring the deposition rate of pyrocarbon and silicon substrates floated, grounded or biased to minus 100 volts.
Scientific Publication
You may also be interested in