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Advanced VLS growth of gold encrusted silicon nanowires Mediated by porous Aluminium Oxide template
Year:
2021
Source of publication :
Vacuum
Authors :
אניל, סגהלי מנג'גוודה
;
.
Volume :
185
Co-Authors:
  • Deepu, B.R. - National Nanofabrication Centre, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India; Department of Studies in Chemistry, University of Mysore, Manasagangotri, Mysuru, Karnataka 570006, India.
  • Anil, S.M. - Institute of Plant Science, ARO, Volcani Center, Rishon LeZion, 7505101, Israel.
  • Savitha, P. - National Nanofabrication Centre, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India. 
    Basavaraju, Y.B. - Department of Studies in Chemistry, University of Mysore, Manasagangotri, Mysuru, Karnataka 570006, India.
  •  
Facilitators :
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Total pages:
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Abstract:

A highly efficient technique for the generation of dense and homogeneous Au-nanodroplets using Anodic Aluminium Oxide template (AAO) for the fabrication of single crystal gold encrusted array of silicon nanowires (SiNWs) was successfully developed. In interest of extending AAO's practical applicability, the Au-thin film sandwiched between Si-substrate and AAO was torn-up into small nanodroplets at annealing temperature followed by removal of AAO template before VLS growth instead of growing SiNWs directly in presence of AAO template. It's observed that smaller Au-nanodroplets are mandatory to yield dense array of SiNWs, further, size of formed Au-droplets is directly relied on AAO pore-size. Thus, construction of desired pore diameter on AAO was critically controlled by the application of voltage in presence of different etchants (sulfuric acid (SA), oxalic acid (OA) and phosphoric acid (PA)). Among the different etchants used SA demonstrated smaller AAO-pore size at a specific voltage and concentration. Further, obtained smaller Au-nanodroplets (from SA etched AAO) exhibited a denser array of SiNWs on VLS growth at particular set of experimental conditions. Characterization by advanced techniques such as UV–Vis spectroscopy, Micro-Raman spectroscopy, Scanning Electron Microscope (SEM), Transmission Electron Microscopy (TEM), High-Angle Angular Dark Field Scanning Transmission Electron Microscopy (HAADF-STEM) and Energy Dispersive X-ray Spectroscopy (EDX) revealed that the formed SiNWs were of 199 ± 43 nm diameter with well-decorated gold nano encrustations on the surface and at the tip. The formed SiNWs were in resemblance with SiNWs obtained from high precision e-beam Lithography, evidencing the superiority of the current method. 

Note:
Related Files :
Alumina
Gold
oxalic acid
Pore size
Single crystals
עוד תגיות
תוכן קשור
More details
DOI :
10.1016/j.vacuum.2020.109991
Article number:
0
Affiliations:
Database:
סקופוס
Publication Type:
מאמר
;
.
Language:
אנגלית
Editors' remarks:
ID:
52799
Last updated date:
02/03/2022 17:27
Creation date:
29/12/2020 16:46
You may also be interested in
Scientific Publication
Advanced VLS growth of gold encrusted silicon nanowires Mediated by porous Aluminium Oxide template
185
  • Deepu, B.R. - National Nanofabrication Centre, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India; Department of Studies in Chemistry, University of Mysore, Manasagangotri, Mysuru, Karnataka 570006, India.
  • Anil, S.M. - Institute of Plant Science, ARO, Volcani Center, Rishon LeZion, 7505101, Israel.
  • Savitha, P. - National Nanofabrication Centre, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India. 
    Basavaraju, Y.B. - Department of Studies in Chemistry, University of Mysore, Manasagangotri, Mysuru, Karnataka 570006, India.
  •  
Advanced VLS growth of gold encrusted silicon nanowires Mediated by porous Aluminium Oxide template

A highly efficient technique for the generation of dense and homogeneous Au-nanodroplets using Anodic Aluminium Oxide template (AAO) for the fabrication of single crystal gold encrusted array of silicon nanowires (SiNWs) was successfully developed. In interest of extending AAO's practical applicability, the Au-thin film sandwiched between Si-substrate and AAO was torn-up into small nanodroplets at annealing temperature followed by removal of AAO template before VLS growth instead of growing SiNWs directly in presence of AAO template. It's observed that smaller Au-nanodroplets are mandatory to yield dense array of SiNWs, further, size of formed Au-droplets is directly relied on AAO pore-size. Thus, construction of desired pore diameter on AAO was critically controlled by the application of voltage in presence of different etchants (sulfuric acid (SA), oxalic acid (OA) and phosphoric acid (PA)). Among the different etchants used SA demonstrated smaller AAO-pore size at a specific voltage and concentration. Further, obtained smaller Au-nanodroplets (from SA etched AAO) exhibited a denser array of SiNWs on VLS growth at particular set of experimental conditions. Characterization by advanced techniques such as UV–Vis spectroscopy, Micro-Raman spectroscopy, Scanning Electron Microscope (SEM), Transmission Electron Microscopy (TEM), High-Angle Angular Dark Field Scanning Transmission Electron Microscopy (HAADF-STEM) and Energy Dispersive X-ray Spectroscopy (EDX) revealed that the formed SiNWs were of 199 ± 43 nm diameter with well-decorated gold nano encrustations on the surface and at the tip. The formed SiNWs were in resemblance with SiNWs obtained from high precision e-beam Lithography, evidencing the superiority of the current method. 

Scientific Publication
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